, li ne. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 medium-power complementary silicon transistors ...designed for use as output devices in complementary general purpose amplifier applications. features: * high gain darlington performance * dc current gain hfe = 3500(typ) q lc = 10 a * monolithic construction with built-in base-emitter shunt resistor maximum ratings characteristic collector-emitter voltage coiiector-base voltage emitter-base voltage collector current-continuous -peak base current total power dissipation @tc= 25c derate above 25c operating and storage junction temperature range symbol vceo vcbo vebo lc 'cm ib pd tj 'tstq MJ4030 mj4033 60 60 mj4031 mj4034 80 80 mj4032 mj4036 100 100 5.0 16 20 0.5 150 0.857 - 65 to +200 unit v v v a a w w/c c thermal characteristics characteristic thermal resistance junction to case symbol rajc max 1.17 unit c/w figure -1 power derating 150 !125 moo 75 50 26 25 50 75 100 125 150 175 200 tc , temperatxjre('c) pnp npn MJ4030 mj4033 mj4031 mj4034 mj4032 mj4035 16 ampere complementary silicon power darlington transistor 60-100 volts 150 watts to-3 k e pin 1.base 2.emhter couector MJ4030, mj4031, mj4032 pnp / mj4033, mj4034, mj4035 npn electrical characteristics ( tc = 25*c unless otherwise noted ) characteristic symbol min max unit off characteristics collector - emitter sustaining voltage (1) ( lc - 100 ma, ib - 0 ) MJ4030.mj4033 mj4031.mj4034 mj4032.mj4035 collector cutoff current ( vci = 30 v, i. = 0 ) MJ4030.mj4033 (vci = 4qv, l. = 0) mj4031.mj4034 ( vci = 50 v, i, = 0 ) mj4032.mj4035 collector-emitter leakage current ( vcl = 60 v, ru = 1.0k ohm ) MJ4030.mj4033 (vc, = 80v, rm" 1.0k ohm) mj4031.mj4034 ( vw= 100v, rm= 1.0k ohm ) mj4032.mj4035 (vm = 60v, rm = 1.0k ohm, tc=1soc) MJ4030.mj4033 ( vc< = 80 v, rm ? 1.0k ohm , te = 150c ) mj4031.mj4034 ( vc, = 100 v, rm - 1.0k ohm ,tc = 150c ) mj4o32.mj4035 emitter cutoff current (veb = 5.0v,ic=0 ) *ceo(hh) \r^*f\m+*mj 'ceo icer loo 60 80 100 3.0 3.0 3.0 1.0 1.0 1.0 5.0 5.0 5.0 5.0 v ma ma ma on characteristics (1) dc current gain (ic=10a,vce = 3.0v) collector-emitter saturation voltage (lc=10a,lb = 40ma) (lc=16a,lb=80ma) base-emitter on voltage (ic*10a,vce = 3.0v) hfe vcs,^ wo 1000 2.5 4.0 3.0 v v (1) pulse test pulse width - 300 us, duty cycle 2.0%
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